Schottky barrier-based silicon nanowire pH sensor with live sensitivity control

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-free arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances make this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.

Details

Original languageEnglish
Pages (from-to)263-271
Number of pages9
JournalNano research
Volume7
Issue number2
Publication statusPublished - Feb 2014
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/142256328
ORCID /0000-0003-1010-2791/work/175772216

Keywords

Keywords

  • bottom-up fabrication, field effect transistor, maximum sensitivity of sensor, nanosensors, pH sensor, silicon nanowires, sub-threshold regime