Schottky barrier-based silicon nanowire pH sensor with live sensitivity control

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

Abstract

We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-free arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances make this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.

Details

OriginalspracheEnglisch
Seiten (von - bis)263-271
Seitenumfang9
FachzeitschriftNano research
Jahrgang7
Ausgabenummer2
PublikationsstatusVeröffentlicht - Feb. 2014
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0003-3814-0378/work/142256328
ORCID /0000-0003-1010-2791/work/175772216

Schlagworte

Schlagwörter

  • bottom-up fabrication, field effect transistor, maximum sensitivity of sensor, nanosensors, pH sensor, silicon nanowires, sub-threshold regime