Schottky barrier height engineering for next generation DRAM capacitors

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • K. Cho - , Samsung (Author)
  • Milan Pešić - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Knebel - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • C. Jung - , Samsung (Author)
  • J. Chang - , Samsung (Author)
  • H. Lim - , Samsung (Author)
  • N. Kolomiiets - , KU Leuven (Author)
  • V.V. Afanas'Ev - , KU Leuven (Author)
  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Title of host publicationEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Pages129-132
ISBN (electronic)978-1-4799-6911-1
Publication statusPublished - 2015
Peer-reviewedYes

External IDs

Scopus 84926480186

Keywords