Ru-based thin films are essential for electronics and catalysis. Their growth through atomic layer deposition (ALD) depends on precursors that balance reactivity, volatility, and thermal stability. We present the first Ru dicarbonyl bisamidate complexes as a new and promising class of ALD precursors for Ru-based materials. Modifying the substitution pattern of the amidate ligands yielded [Ru(CO)₂(N-sBuiPrAD)₂], as a volatile liquid precursor with excellent thermal properties. First principles simulations predict favorable interactions with common ALD co-reactants, indicating its potential for thin film deposition.