Root cause of degradation in novel HfO2-based ferroelectric memories

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

Details

Original languageEnglish
Title of host publication2016 IEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (electronic)978-1-4673-9137-5
ISBN (print)978-1-4673-9138-2
Publication statusPublished - 2016
Peer-reviewedYes

Publication series

SeriesIEEE International Reliability Physics Symposium Proceedings
ISSN1541-7026

External IDs

Scopus 84990976034

Keywords