Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

Details

Original languageEnglish
Title of host publication2013 5th IEEE International Memory Workshop
PublisherIEEE
ISBN (electronic)978-1-4673-6169-9
ISBN (print)978-1-4673-6168-2
Publication statusPublished - 2013
Peer-reviewedYes

Publication series

SeriesIEEE International Memory Workshop (IMW)
ISSN2330-7978

External IDs

Scopus 84883738708

Keywords