RF small-signal modeling of HCI degradation in FDSOI NMOSFET using BSIM-IMG

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Fabio A. Velarde Gonzalez - , Fraunhofer Institute for Integrated Circuits IIS Division Engineering of Adaptive Systems EAS (Author)
  • Andre Lange - , Fraunhofer Institute for Integrated Circuits IIS Division Engineering of Adaptive Systems EAS (Author)
  • Talha Chohan - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics (Author)

Abstract

The increasing demand for reliable CMOS devices in high-frequency applications brings new challenges in the modeling of aging effects in transistors, with the need to also capture degradation of RF performance. In this paper, we explore the possibilities of using BSIM-IMG parameters to model HCI degradation under DC stress on a 22FDX™ FDSOI n-channel transistor. First, a selection of parameters is used to model HCI degradation and its impact on RF performance is analyzed.

Details

Original languageEnglish
Title of host publication2021 IEEE International Integrated Reliability Workshop (IIRW)
Pages33-37
Number of pages5
ISBN (electronic)978-1-6654-1794-5
Publication statusPublished - 2021
Peer-reviewedYes

Publication series

SeriesIEEE International Integrated Reliability Workshop (IIRW)
ISSN1930-8841

External IDs

Scopus 85123718300
ORCID /0000-0003-3814-0378/work/142256359

Keywords

ASJC Scopus subject areas

Keywords

  • BSIM-IMG, FDSOI, HCI, RF reliability, S-parameters