Reliability characterization of non-hysteretic charge amplification in MFIM device

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Moritz Engl - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH, TUD Dresden University of Technology (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Abstract

A measurement procedure is presented to characterize the degradation of the hysteresis free charge amplification in unipolar operation of negative capacitance capacitors. Two different degradation processes are identified from these measurements and are related to remanent switching of domains and a change in the electrical internal bias field.

Details

Original languageEnglish
Article number108721
JournalSolid-state electronics
Volume207
Publication statusPublished - Sept 2023
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/142256373

Keywords

ASJC Scopus subject areas

Keywords

  • Degradation, Ferroelectric, Hafnium zirconium oxide, Measurement, Negative capacitance (NC), Reliability

Library keywords