Reliability characterization of non-hysteretic charge amplification in MFIM device

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Moritz Engl - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH, Technische Universität Dresden (Autor:in)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)

Abstract

A measurement procedure is presented to characterize the degradation of the hysteresis free charge amplification in unipolar operation of negative capacitance capacitors. Two different degradation processes are identified from these measurements and are related to remanent switching of domains and a change in the electrical internal bias field.

Details

OriginalspracheEnglisch
Aufsatznummer108721
FachzeitschriftSolid-state electronics
Jahrgang207
PublikationsstatusVeröffentlicht - Sept. 2023
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0003-3814-0378/work/142256373

Schlagworte

Schlagwörter

  • Degradation, Ferroelectric, Hafnium zirconium oxide, Measurement, Negative capacitance (NC), Reliability

Bibliotheksschlagworte