Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

  • Suzanne Lancaster - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Mattia Segatto - , University of Udine (Author)
  • Claudia Silva - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Benjamin Max - , Chair of Nanoelectronics, Work Group Cool Silicon (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH, Dresden University of Technology (Author)
  • David Esseni - , University of Udine (Author)
  • Francesco Driussi - , University of Udine (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Abstract

Ferroelectric tunnel junctions (FTJs) are non-volatile devices in which the read current is controlled by the polarisation state of a ferroelectric (FE) layer [1]. Bilayer FTJs based on hafnium zirconium oxide (HZO) and a dielectric layer (DE, here Al2O3) on metallic electrodes show promise for embdedded Non-Volatile Memory and BEOL integration [2], [3]. However, the DE thickness impacts both the FTJ properties [4] and stability of the FE state [5]. Previous research indicated an optimal DE thickness of 2-3 nm [4], but this leads to a deleterious rapid polarisation loss [6]. Here, electrode work function (WF) engineering is presented as a suitable measure to reduce the tunneling barrier height, thus improving the current density of bilayer FTJs [7]. DE scaling is also proposed to retain high TER and J{on}-J{off} at reduced operating voltages.

Details

Original languageEnglish
Title of host publication2023 Device Research Conference, DRC 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (electronic)9798350323108
Publication statusPublished - 2023
Peer-reviewedYes

Publication series

SeriesDevice Research Conference - Conference Digest, DRC
Volume2023-June
ISSN1548-3770

Conference

Title2023 Device Research Conference, DRC 2023
Duration25 - 28 June 2023
CitySanta Barbara
CountryUnited States of America

External IDs

ORCID /0000-0003-3814-0378/work/144255457

Keywords

ASJC Scopus subject areas