Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Ferroelectric tunnel junctions (FTJs) are non-volatile devices in which the read current is controlled by the polarisation state of a ferroelectric (FE) layer [1]. Bilayer FTJs based on hafnium zirconium oxide (HZO) and a dielectric layer (DE, here Al2O3) on metallic electrodes show promise for embdedded Non-Volatile Memory and BEOL integration [2], [3]. However, the DE thickness impacts both the FTJ properties [4] and stability of the FE state [5]. Previous research indicated an optimal DE thickness of 2-3 nm [4], but this leads to a deleterious rapid polarisation loss [6]. Here, electrode work function (WF) engineering is presented as a suitable measure to reduce the tunneling barrier height, thus improving the current density of bilayer FTJs [7]. DE scaling is also proposed to retain high TER and J{on}-J{off} at reduced operating voltages.
Details
Original language | English |
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Title of host publication | 2023 Device Research Conference, DRC 2023 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (electronic) | 9798350323108 |
Publication status | Published - 2023 |
Peer-reviewed | Yes |
Publication series
Series | Device Research Conference - Conference Digest, DRC |
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Volume | 2023-June |
ISSN | 1548-3770 |
Conference
Title | 81st Device Research Conference |
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Abbreviated title | DRC 2023 |
Conference number | 81 |
Duration | 25 - 28 June 2023 |
Location | University of California at Santa Barbara |
City | Santa Barbara |
Country | United States of America |
External IDs
ORCID | /0000-0003-3814-0378/work/144255457 |
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