Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Andreas Fuchsberger - , Vienna University of Technology (Author)
  • Alexandra Dobler - , Vienna University of Technology (Author)
  • Lukas Wind - , Vienna University of Technology (Author)
  • Andreas Kramer - , Technische Universität Darmstadt (Author)
  • Julian Kulenkampff - , Technische Universität Darmstadt (Author)
  • Maximilian Reuter - , Technische Universität Darmstadt (Author)
  • Daniele Nazzari - , Vienna University of Technology (Author)
  • Giulio Galderisi - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Enrique Prado Navarrete - , Johannes Kepler University Linz (Author)
  • Johannes Aberl - , Johannes Kepler University Linz (Author)
  • Moritz Brehm - , Johannes Kepler University Linz (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Jens Trommer - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Klaus Hofmann - , Technische Universität Darmstadt (Author)
  • Masiar Sistani - , Vienna University of Technology (Author)
  • Walter M. Weber - , Vienna University of Technology (Author)

Abstract

Exploiting the capabilities of multi-gated transistors is a promising strategy for adaptive and compensative analog circuits. Typically, reconfigurable transistors, which can be switched between n-and p-type operation at runtime, are used as universal transistors in fine grain programmable digital circuits. However, in the analog domain, by operating the transistors deliberately in intermediate states, they enable adjustments to application-specific requirements and allow for compensation of undesired deviations. Here, we propose a Ge-on-SOI transistor circuit primitive that enables an adaptable circuit design featuring n-and p-type common source (CS) and drain circuits, with electrostatically tuneable output-to-input ratio. Most notably, combined experimental and simulation studies promote verification and scalability assessment. Finally, the first experimental evidence of the electrostatic compensation of transistor/circuitpath-related device-to-device inequalities is shown in a differential amplifier featuring adaptable gain.

Details

Original languageEnglish
Pages (from-to)2868-2873
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume72
Issue number6
Publication statusPublished - Jun 2025
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/185316024

Keywords

Keywords

  • Adaptive circuits, electrostatic offset compensation, germanium, multi-gate transistors, reconfigurable transistors