Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Andreas Fuchsberger - , Technische Universitat Wien (Autor:in)
  • Alexandra Dobler - , Technische Universitat Wien (Autor:in)
  • Lukas Wind - , Technische Universitat Wien (Autor:in)
  • Andreas Kramer - , Technische Universität Darmstadt (Autor:in)
  • Julian Kulenkampff - , Technische Universität Darmstadt (Autor:in)
  • Maximilian Reuter - , Technische Universität Darmstadt (Autor:in)
  • Daniele Nazzari - , Technische Universitat Wien (Autor:in)
  • Giulio Galderisi - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Enrique Prado Navarrete - , Johannes Kepler Universität Linz (Autor:in)
  • Johannes Aberl - , Johannes Kepler Universität Linz (Autor:in)
  • Moritz Brehm - , Johannes Kepler Universität Linz (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Jens Trommer - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Klaus Hofmann - , Technische Universität Darmstadt (Autor:in)
  • Masiar Sistani - , Technische Universitat Wien (Autor:in)
  • Walter M. Weber - , Technische Universitat Wien (Autor:in)

Abstract

Exploiting the capabilities of multi-gated transistors is a promising strategy for adaptive and compensative analog circuits. Typically, reconfigurable transistors, which can be switched between n-and p-type operation at runtime, are used as universal transistors in fine grain programmable digital circuits. However, in the analog domain, by operating the transistors deliberately in intermediate states, they enable adjustments to application-specific requirements and allow for compensation of undesired deviations. Here, we propose a Ge-on-SOI transistor circuit primitive that enables an adaptable circuit design featuring n-and p-type common source (CS) and drain circuits, with electrostatically tuneable output-to-input ratio. Most notably, combined experimental and simulation studies promote verification and scalability assessment. Finally, the first experimental evidence of the electrostatic compensation of transistor/circuitpath-related device-to-device inequalities is shown in a differential amplifier featuring adaptable gain.

Details

OriginalspracheEnglisch
Seiten (von - bis)2868-2873
Seitenumfang6
FachzeitschriftIEEE Transactions on Electron Devices
Jahrgang72
Ausgabenummer6
PublikationsstatusVeröffentlicht - Juni 2025
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0003-3814-0378/work/185316024

Schlagworte

Schlagwörter

  • Adaptive circuits, electrostatic offset compensation, germanium, multi-gate transistors, reconfigurable transistors