Quantitative analysis of backscattered electron (BSE) contrast using low voltage scanning electron microscopy (LVSEM) and its application to Al0. 22Ga0. 78N/GaN layers.

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

A Garitagoitia Cid - , Dresden Center for Nanoanalysis (DCN) (Author)
R Rosenkranz - (Author)
M Löffler - , Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (cfaed) (Author)
A Clausner - (Author)
Y Standke - (Author)
E Zschech - , Faculty of Electrical and Computer Engineering, Fraunhofer Institute for Ceramic Technologies and Systems (Author)

Scopus	85052655471