Pulsed stress reliability investigations of Schottky diodes and HBTS

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • M. Schüßler - , Technische Universität Darmstadt (Author)
  • V. Krozer - , Chemnitz University of Technology (Author)
  • K. H. Bock - , Chair of Electronic Packaging Technology, Interuniversitair Micro-Elektronica Centrum (Author)
  • M. Brandt - , Technische Universität Darmstadt (Author)
  • L. Vecci - , University of Parma (Author)
  • R. Losi - , University of Parma (Author)
  • H. L. Hartnagel - , Technische Universität Darmstadt (Author)

Abstract

Experimental results from stressing Schottky diodes and HBTs employing TLP (Transmission Line Pulses) with 100ns duration time and ESD pulses following the Human Body Model are compared. Based on optical and electrical characterisation the same failure mechanisms seem to occur indicating the strong degree of relationship between these two methods. Device failures are explained by thermally activated interface and bulk reactions, field enhanced material transport and hot charge carrier effects.

Details

Original languageEnglish
Pages (from-to)1907-1910
Number of pages4
JournalMicroelectronics Reliability
Volume36
Issue number11-12
Publication statusPublished - 1996
Peer-reviewedYes

External IDs

ORCID /0000-0002-0757-3325/work/139064898

Keywords

ASJC Scopus subject areas

Library keywords