Programming transients of trapping nitride storage flash memory cells and evidence of lateral charge redistributions during or after programming

Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review

Contributors

  • G. Tempel - , Infineon Technologies AG (Author)
  • W. V. Emden - , Infineon Technologies AG (Author)
  • R. Hagenbeck - , Infineon Technologies AG (Author)
  • P. Haibach - , Infineon Technologies AG (Author)
  • M. Isler - , Infineon Technologies AG (Author)
  • T. Mikolajick - , Infineon Technologies AG (Author)
  • T. Müller - , Infineon Technologies AG (Author)
  • S. Riedel - , Infineon Technologies AG (Author)
  • J. M. Schley - , Infineon Technologies AG (Author)
  • J. Schott - , Infineon Technologies AG (Author)
  • M. Strassburg - , Infineon Technologies AG (Author)
  • J. Willer - , Infineon Technologies AG (Author)

Details

Original languageEnglish
Title of host publication21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Pages81-83
Number of pages3
Publication statusPublished - 2006
Peer-reviewedYes
Externally publishedYes

Publication series

Series21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Volume2006

Conference

Title21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Duration12 - 16 February 2006
CityMonteray, CA
CountryUnited States of America

External IDs

ORCID /0000-0003-3814-0378/work/156338375

Keywords

ASJC Scopus subject areas