Physical model of threshold switching in NbO2 based memristors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Pages (from-to) | 102318-102322 |
Number of pages | 5 |
Journal | RSC advances |
Volume | 5 |
Issue number | 124 |
Publication status | Published - 2015 |
Peer-reviewed | Yes |
External IDs
Scopus | 84948800318 |
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ORCID | /0000-0001-7436-0103/work/142240356 |