Physical model of threshold switching in NbO2 based memristors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 102318-102322 |
| Number of pages | 5 |
| Journal | RSC advances |
| Volume | 5 |
| Issue number | 124 |
| Publication status | Published - 2015 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84948800318 |
|---|---|
| ORCID | /0000-0001-7436-0103/work/142240356 |