Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Article number | 1700489 |
| Journal | Advanced electronic materials |
| Volume | 4 |
| Issue number | 4 |
| Publication status | Published - 2018 |
| Peer-reviewed | Yes |
External IDs
| WOS | 000430115000005 |
|---|---|
| Scopus | 85044327505 |