Optical Properties of Ferroelectric Films HfxZryO2 and La:HfxZryO2 according to Ellipsometry Data

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • V. N. Kruchinin - , RAS - Institute of Semiconductor Physics, Siberian Branch (Author)
  • E. V. Spesivtsev - , RAS - Institute of Semiconductor Physics, Siberian Branch (Author)
  • C. V. Rykhlitsky - , RAS - Institute of Semiconductor Physics, Siberian Branch (Author)
  • V. A. Gritsenko - , RAS - Institute of Semiconductor Physics, Siberian Branch, Novosibirsk State University, Novosibirsk State Technical University (Author)
  • F. Mehmood - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH, TUD Dresden University of Technology (Author)
  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Abstract

Abstract: Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory, which combines the advantages of random access memory and flash memory. The paper studies optical properties of hafnia-zirconium oxide films H-fxZryO2 and lanthanum-alloyed hafnia-zirconium oxide films La:HfxZryO2. Fluctuations of thickness in HfxZryO2 do not exceed 3.5%, fluctuations of thickness in La:HfxZryO2 films—3.2%. Optical properties are analyzed based on effective-medium theory. According to effective-medium theory data, HfxZryO2 films contain 46% HfO2, 54% ZrO2, La:HfxZryO2 films contain 47.5% HfO2, 52.4% ZrO2, 2.5% La2O3.

Details

Original languageEnglish
Pages (from-to)550-553
Number of pages4
JournalOptics and Spectroscopy
Volume131
Issue number7
Publication statusPublished - Jul 2023
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/163295401

Keywords

ASJC Scopus subject areas

Keywords

  • effective-medium theory, ferroelectric, refraction index, spectral ellipsometry