On the Control of the Fixed Charge Densities in Al<inf>2</inf>O<inf>3</inf>-Based Silicon Surface Passivation Schemes
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Pages (from-to) | 28215–28222 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 7 |
Issue number | 51 |
Publication status | Published - 2015 |
Peer-reviewed | Yes |
External IDs
Scopus | 84952880572 |
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