Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Contributors

  • Mor M. Dahan - , Technion-Israel Institute of Technology (Author)
  • Emanuel Ber - , Technion-Israel Institute of Technology (Author)
  • Florian Wunderwald - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Gilad Zilberman - , Technion-Israel Institute of Technology (Author)
  • Guy Orlev - , Technion-Israel Institute of Technology (Author)
  • Yair Keller - , Technion-Israel Institute of Technology (Author)
  • Einav Raveh - , Technion-Israel Institute of Technology (Author)
  • Ruben Alcala - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Eilam Yalon - , Technion-Israel Institute of Technology (Author)

Abstract

Conventional FeRAM readout methods are destructive, requiring polarization switching of the FE capacitor (FeCAP) and write-back, which reduces endurance, increases latency, and energy consumption. Prior works on non-destructive readout (NDRO) relied on capacitance memory window (MW), which is slow and requires asymmetric FeCAP structure, compromising retention and increasing circuit complexity. Here, we present a novel NDRO method utilizing ultrafast transient response which applies to both symmetric and asymmetric structures. We experimentally demonstrate sub-ns read operations without altering the polarization state, achieving >1013 read cycles (limited by test time). This structure-agnostic method improves retention (tested at 125°C), endurance, and simplifies implementation, thus paving the way for fast, energy-efficient FeRAM-based solutions.

Details

Original languageEnglish
Title of host publication2025 IEEE International Memory Workshop, IMW 2025 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (electronic)979-8-3503-6298-5
Publication statusPublished - 2025
Peer-reviewedYes

Publication series

SeriesIEEE International Memory Workshop (IMW)
ISSN2330-7978

Workshop

Title17th IEEE International Memory Workshop
Abbreviated titleIMW 2025
Conference number17
Duration18 - 21 May 2025
Website
Degree of recognitionInternational event
LocationPortola Hotel & Spa
CityMonterey
CountryUnited States of America

External IDs

ORCID /0000-0003-3814-0378/work/188860466

Keywords

Sustainable Development Goals

Keywords

  • Back-end-of-line compatibility, endurance, FeRAM, HZO, In-memory computing, Non-destructive readout, Nonvolatile memory