Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Conventional FeRAM readout methods are destructive, requiring polarization switching of the FE capacitor (FeCAP) and write-back, which reduces endurance, increases latency, and energy consumption. Prior works on non-destructive readout (NDRO) relied on capacitance memory window (MW), which is slow and requires asymmetric FeCAP structure, compromising retention and increasing circuit complexity. Here, we present a novel NDRO method utilizing ultrafast transient response which applies to both symmetric and asymmetric structures. We experimentally demonstrate sub-ns read operations without altering the polarization state, achieving >1013 read cycles (limited by test time). This structure-agnostic method improves retention (tested at 125°C), endurance, and simplifies implementation, thus paving the way for fast, energy-efficient FeRAM-based solutions.
Details
| Original language | English |
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| Title of host publication | 2025 IEEE International Memory Workshop, IMW 2025 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Number of pages | 4 |
| ISBN (electronic) | 979-8-3503-6298-5 |
| Publication status | Published - 2025 |
| Peer-reviewed | Yes |
Publication series
| Series | IEEE International Memory Workshop (IMW) |
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| ISSN | 2330-7978 |
Workshop
| Title | 17th IEEE International Memory Workshop |
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| Abbreviated title | IMW 2025 |
| Conference number | 17 |
| Duration | 18 - 21 May 2025 |
| Website | |
| Degree of recognition | International event |
| Location | Portola Hotel & Spa |
| City | Monterey |
| Country | United States of America |
External IDs
| ORCID | /0000-0003-3814-0378/work/188860466 |
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Keywords
Sustainable Development Goals
ASJC Scopus subject areas
Keywords
- Back-end-of-line compatibility, endurance, FeRAM, HZO, In-memory computing, Non-destructive readout, Nonvolatile memory