Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
Conventional FeRAM readout methods are destructive, requiring polarization switching of the FE capacitor (FeCAP) and write-back, which reduces endurance, increases latency, and energy consumption. Prior works on non-destructive readout (NDRO) relied on capacitance memory window (MW), which is slow and requires asymmetric FeCAP structure, compromising retention and increasing circuit complexity. Here, we present a novel NDRO method utilizing ultrafast transient response which applies to both symmetric and asymmetric structures. We experimentally demonstrate sub-ns read operations without altering the polarization state, achieving >1013 read cycles (limited by test time). This structure-agnostic method improves retention (tested at 125°C), endurance, and simplifies implementation, thus paving the way for fast, energy-efficient FeRAM-based solutions.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 2025 IEEE International Memory Workshop, IMW 2025 - Proceedings |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers (IEEE) |
| Seitenumfang | 4 |
| ISBN (elektronisch) | 979-8-3503-6298-5 |
| Publikationsstatus | Veröffentlicht - 2025 |
| Peer-Review-Status | Ja |
Publikationsreihe
| Reihe | IEEE International Memory Workshop (IMW) |
|---|---|
| ISSN | 2330-7978 |
Workshop
| Titel | 17th IEEE International Memory Workshop |
|---|---|
| Kurztitel | IMW 2025 |
| Veranstaltungsnummer | 17 |
| Dauer | 18 - 21 Mai 2025 |
| Webseite | |
| Bekanntheitsgrad | Internationale Veranstaltung |
| Ort | Portola Hotel & Spa |
| Stadt | Monterey |
| Land | USA/Vereinigte Staaten |
Externe IDs
| ORCID | /0000-0003-3814-0378/work/188860466 |
|---|
Schlagworte
Ziele für nachhaltige Entwicklung
ASJC Scopus Sachgebiete
Schlagwörter
- Back-end-of-line compatibility, endurance, FeRAM, HZO, In-memory computing, Non-destructive readout, Nonvolatile memory