Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

  • Mor M. Dahan - , Technion-Israel Institute of Technology (Autor:in)
  • Emanuel Ber - , Technion-Israel Institute of Technology (Autor:in)
  • Florian Wunderwald - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Gilad Zilberman - , Technion-Israel Institute of Technology (Autor:in)
  • Guy Orlev - , Technion-Israel Institute of Technology (Autor:in)
  • Yair Keller - , Technion-Israel Institute of Technology (Autor:in)
  • Einav Raveh - , Technion-Israel Institute of Technology (Autor:in)
  • Ruben Alcala - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Eilam Yalon - , Technion-Israel Institute of Technology (Autor:in)

Abstract

Conventional FeRAM readout methods are destructive, requiring polarization switching of the FE capacitor (FeCAP) and write-back, which reduces endurance, increases latency, and energy consumption. Prior works on non-destructive readout (NDRO) relied on capacitance memory window (MW), which is slow and requires asymmetric FeCAP structure, compromising retention and increasing circuit complexity. Here, we present a novel NDRO method utilizing ultrafast transient response which applies to both symmetric and asymmetric structures. We experimentally demonstrate sub-ns read operations without altering the polarization state, achieving >1013 read cycles (limited by test time). This structure-agnostic method improves retention (tested at 125°C), endurance, and simplifies implementation, thus paving the way for fast, energy-efficient FeRAM-based solutions.

Details

OriginalspracheEnglisch
Titel2025 IEEE International Memory Workshop, IMW 2025 - Proceedings
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers (IEEE)
Seitenumfang4
ISBN (elektronisch)979-8-3503-6298-5
PublikationsstatusVeröffentlicht - 2025
Peer-Review-StatusJa

Publikationsreihe

ReiheIEEE International Memory Workshop (IMW)
ISSN2330-7978

Workshop

Titel17th IEEE International Memory Workshop
KurztitelIMW 2025
Veranstaltungsnummer17
Dauer18 - 21 Mai 2025
Webseite
BekanntheitsgradInternationale Veranstaltung
OrtPortola Hotel & Spa
StadtMonterey
LandUSA/Vereinigte Staaten

Externe IDs

ORCID /0000-0003-3814-0378/work/188860466

Schlagworte

Ziele für nachhaltige Entwicklung

Schlagwörter

  • Back-end-of-line compatibility, endurance, FeRAM, HZO, In-memory computing, Non-destructive readout, Nonvolatile memory