Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Milan Pešić - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • M. Hoffmann - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • C. Richter - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Pages (from-to)7486-7494
Number of pages9
JournalAdvanced functional materials
Volume26
Issue number41
Publication statusPublished - 2016
Peer-reviewedYes

External IDs

Scopus 84986247459

Keywords

Library keywords