Nonvolatile field-effect transistors using ferroelectric doped HfO2 films

Research output: Contribution to book/Conference proceedings/Anthology/Report › Chapter in book/Anthology/Report › Invited › peer-review

Contributors

  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Title of host publicationFerroelectric-Gate Field Effect Transistor Memories
Pages57–72
Edition1
ISBN (electronic)978-94-024-0841-6
Publication statusPublished - 2016
Peer-reviewedYes

Publication series

SeriesTopics in Applied Physics (TAP)
Volume131
ISSN0303-4216

External IDs

Scopus 84986207897

Keywords