Next generation ferroelectric materials for semiconductor process integration and their applications
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.
Details
| Original language | English |
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| Article number | 100901 |
| Journal | Journal of applied physics |
| Volume | 129 |
| Issue number | 10 |
| Publication status | Published - 14 Mar 2021 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 85102461997 |
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