Next generation ferroelectric materials for semiconductor process integration and their applications
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.
Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 100901 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 129 |
| Ausgabenummer | 10 |
| Publikationsstatus | Veröffentlicht - 14 März 2021 |
| Peer-Review-Status | Ja |
Externe IDs
| Scopus | 85102461997 |
|---|