In the present paper, the use of high aspect ratio metallic nanowires (NWs) as functional interconnects between three-dimensionally stacked chips is proposed. First practical preparation steps, as there are the preparation of templates and the deposition of Ag-NWs, are presented. Later on, the applicational technology for vertically aligned NWs is proposed as their embedment into a polymer matrix resulting in an anisotropically conductive composite film. This is discussed in both technological and functional aspects.