Modeling and simulation of electron injection during programming in Twin Flash™ devices based on energy transport and the non-local lucky electron concept

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Rainer Hagenbeck - , Infineon Technologies AG (Author)
  • S. Decker - , Infineon Technologies AG (Author)
  • F. Lau - , Infineon Technologies AG (Author)
  • P. Haibach - , Infineon Technologies AG (Author)
  • J. M. Schley - , Infineon Technologies AG (Author)
  • M. Isler - , Infineon Technologies AG (Author)
  • T. Mikolajick - , Infineon Technologies AG (Author)
  • G. Tempel - , Infineon Technologies AG (Author)

Abstract

We present a simulation analysis of the transient evolution of the hot electron injection process during programming of a Twin Flash™ memory cell. The simulation model is based on the combination of a non-local lucky electron injection model and a hydrodynamic transport model. The time dependent local distribution of injected electrons is simulated iteratively and self-consistently. These results provide valuable physical insight in the Twin Flash™ programming operation.

Details

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalJournal of computational electronics
Volume3
Issue number3-4
Publication statusPublished - Oct 2004
Peer-reviewedYes
Externally publishedYes

External IDs

ORCID /0000-0003-3814-0378/work/156338390

Keywords

ASJC Scopus subject areas

Keywords

  • Charge-trapping device, Hot-carrier injection, Modeling, Nonvolatile memory cell, Simulation