The simulation of initial injection current and trapped charge distribution during programming in twin flash-κ cells was described. With proceeding programming time, the fraction of electrons injected in the channel region was increased, and thus the threshold voltage was also increased. As the injected charge influences the characteristics of injection current process, it is necessary to simulate iteratively nad self-consistently the evolution of injection current and trapped nitride charge during programming. The hydrodynamic (HD) transport model and the non-local lucky electron concept should be applied on order to applied results for the continuum approach and within acceptable computation time.