Modeling and simulation of electron injection during programming in Twin Flash™ devices based on energy transport and the non-local lucky electron concept
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
The simulation of initial injection current and trapped charge distribution during programming in twin flash-κ cells was described. With proceeding programming time, the fraction of electrons injected in the channel region was increased, and thus the threshold voltage was also increased. As the injected charge influences the characteristics of injection current process, it is necessary to simulate iteratively nad self-consistently the evolution of injection current and trapped nitride charge during programming. The hydrodynamic (HD) transport model and the non-local lucky electron concept should be applied on order to applied results for the continuum approach and within acceptable computation time.
Details
Originalsprache | Englisch |
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Titel | 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts |
Seiten | 155-156 |
Seitenumfang | 2 |
Publikationsstatus | Veröffentlicht - 2004 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Konferenz
Titel | 2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts |
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Dauer | 24 - 27 Oktober 2004 |
Stadt | West Lafayette, IN |
Land | USA/Vereinigte Staaten |
Externe IDs
ORCID | /0000-0003-3814-0378/work/156338380 |
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