Mobility Investigations on Strained 30-nm High-k Metal Gate MOSFETs by Geometrical Magnetoresistance Effect

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

Details

Original languageEnglish
JournalIEEE transactions on electron devices : ED
Publication statusPublished - 2015
Peer-reviewedYes

External IDs

WOS 000355405800021
Scopus 84930225698

Keywords