Mobility Investigations on Strained 30-nm High-k Metal Gate MOSFETs by Geometrical Magnetoresistance Effect
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
In this paper, we present mobility investigations of strained nMOS and pMOS short-channel transistors with dimensions down to 30-nm gate length. Using the geometrical magnetoresistance (MR) effect, carrier mobility of electrons and holes in the inversion channel of a recent state-of-the-art CMOS technology is presented from linear to saturation operation conditions. The MR effect allows for a more direct access to the carrier mobility compared with the conventional current/voltage and capacitance/voltage mobility derivation methods, in which series resistance, inversion charge density, and effective channel length are necessary to extract the mobility values of the short-channel devices. In another way, the MR effect can help to disentangle the performance gain of the strained state-of-the art devices to changes in channel mobility or device connection, e.g., series resistance effects
Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 1819 - 1925 |
Fachzeitschrift | IEEE transactions on electron devices : ED |
Jahrgang | 62 |
Ausgabenummer | 6 |
Publikationsstatus | Veröffentlicht - 2015 |
Peer-Review-Status | Ja |
Externe IDs
WOS | 000355405800021 |
---|---|
Scopus | 84930225698 |