Mitigating the degradation of metal–semiconductor contacts with optimized electron beam evaporation

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Thorben Frahm - , RWTH Aachen University (Author)
  • Patrick Liebisch - , RWTH Aachen University (Author)
  • Jochen Heiß - , RWTH Aachen University (Author)
  • Sven Ingebrandt - , RWTH Aachen University (Author)
  • Joachim Knoch - , RWTH Aachen University (Author)
  • Transregio 404: Next Generation Electronics With Active Devices in Three Dimensions

Abstract

An optimized electron beam evaporation (EBE) setup is presented that allows the suppression of charged particle bombardment of 4” semiconductor samples during metal coating. In-situ measurements of charge carrier flux for different tool configurations are carried out. A comparison of platinum-silicon Schottky diodes fabricated without and with the optimized EBE setup shows that a reduction of Fermi level pinning and thus higher Schottky barriers to n-type silicon is obtained.

Details

Original languageEnglish
Article number100368
JournalMicro and Nano Engineering
Volume32
Publication statusPublished - Sept 2026
Peer-reviewedYes
Externally publishedYes

Keywords

Research priority areas of TU Dresden

ASJC Scopus subject areas

Keywords

  • Charged particle bombardment, Electron beam evaporation (EBE), Fermi level pinning, Lift-off, n-type silicon, PMMA, Radiation damage, Schottky diodes