Mitigating the degradation of metal–semiconductor contacts with optimized electron beam evaporation

Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung

Beitragende

  • Thorben Frahm - , Rheinisch-Westfälische Technische Hochschule Aachen (Autor:in)
  • Patrick Liebisch - , Rheinisch-Westfälische Technische Hochschule Aachen (Autor:in)
  • Jochen Heiß - , Rheinisch-Westfälische Technische Hochschule Aachen (Autor:in)
  • Sven Ingebrandt - , Rheinisch-Westfälische Technische Hochschule Aachen (Autor:in)
  • Joachim Knoch - , Rheinisch-Westfälische Technische Hochschule Aachen (Autor:in)
  • Transregio 404: Next Generation Electronics With Active Devices in Three Dimensions

Abstract

An optimized electron beam evaporation (EBE) setup is presented that allows the suppression of charged particle bombardment of 4” semiconductor samples during metal coating. In-situ measurements of charge carrier flux for different tool configurations are carried out. A comparison of platinum-silicon Schottky diodes fabricated without and with the optimized EBE setup shows that a reduction of Fermi level pinning and thus higher Schottky barriers to n-type silicon is obtained.

Details

OriginalspracheEnglisch
Aufsatznummer100368
FachzeitschriftMicro and Nano Engineering
Jahrgang32
PublikationsstatusVeröffentlicht - Sept. 2026
Peer-Review-StatusJa
Extern publiziertJa

Schlagworte

Forschungsprofillinien der TU Dresden

ASJC Scopus Sachgebiete

  • Elektronische, optische und magnetische Materialien - Charged particle bombardment, Electron beam evaporation (EBE), Fermi level pinning, Lift-off, n-type silicon, PMMA, Radiation damage, Schottky diodes
  • Atom- und Molekularphysik sowie Optik - Charged particle bombardment, Electron beam evaporation (EBE), Fermi level pinning, Lift-off, n-type silicon, PMMA, Radiation damage, Schottky diodes
  • Physik der kondensierten Materie - Charged particle bombardment, Electron beam evaporation (EBE), Fermi level pinning, Lift-off, n-type silicon, PMMA, Radiation damage, Schottky diodes
  • Oberflächen, Beschichtungen und Folien - Charged particle bombardment, Electron beam evaporation (EBE), Fermi level pinning, Lift-off, n-type silicon, PMMA, Radiation damage, Schottky diodes
  • Elektrotechnik und Elektronik - Charged particle bombardment, Electron beam evaporation (EBE), Fermi level pinning, Lift-off, n-type silicon, PMMA, Radiation damage, Schottky diodes

Schlagwörter

  • Charged particle bombardment, Electron beam evaporation (EBE), Fermi level pinning, Lift-off, n-type silicon, PMMA, Radiation damage, Schottky diodes