Millisecond flash lamp annealing for LaLuO3 and LaScO 3 high-k dielectrics
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
LaLuO3 and LaScO3 high-k layers were treated by flash lamp annealing (FLA) at temperatures between 1000 C and 1200 C for 3 or 20 ms. This procedure mimics the effect of an source/drain activation annealing by FLA on the electrical and microstructural properties of these alternative high-k dielectrics in a gate-first processing scheme. Related MOS capacitors with a TiN metal gate were processed in a gate-first like processing scheme. It is shown that 3 nm thick oxide layers resist crystallization even at 1200 C for 3 ms, while nanocrystallites are formed in thicker layers. The influence of the FLA treatment on capacitance-voltage (C-V) and current-voltage (I-V) characteristics are investigated. From these measurements, the effects on the relative dielectric constant (k), the fixed oxide charge density (Qox) as well as the leakage current through the insulators are deduced.
Details
Original language | English |
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Pages (from-to) | 381-384 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 109 |
Publication status | Published - 2013 |
Peer-reviewed | Yes |
External IDs
ORCID | /0000-0003-3814-0378/work/142256318 |
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Keywords
ASJC Scopus subject areas
Keywords
- Electrical properties, High-k gate dielectrics, Higher-k gate dielectrics, Rare-earth based gate oxides, Ternary high-k oxides