Low leakage ZrO<inf>2</inf> based capacitors for sub 20 nm dynamic random access memory technology nodes
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
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| Article number | 064101 |
| Journal | Journal of applied physics |
| Volume | 119 |
| Issue number | 6 |
| Publication status | Published - 2016 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84958559633 |
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