Local ion irradiation-induced resistive threshold and memory switching in Nb2O5/NbOx films

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • H. Wylezich - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • H. Mähne - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • J. Rensberg - , Friedrich Schiller University Jena (Author)
  • C. Ronning - , Friedrich Schiller University Jena (Author)
  • P. Zahn - , Helmholtz-Zentrum Dresden-Rossendorf (HZDR) (Author)
  • S. Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Pages (from-to)17474–17480
Number of pages7
JournalACS Applied Materials and Interfaces
Volume6
Issue number20
Publication statusPublished - 12 Sept 2014
Peer-reviewedYes

External IDs

Scopus 84908192561

Keywords

Library keywords