Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM

Research output: Contribution to journalResearch articleContributedpeer-review


  • Jun Okuno - , Sony Group Corporation (Author)
  • Tsubasa Yonai - , Sony Group Corporation (Author)
  • Takafumi Kunihiro - , Sony Group Corporation (Author)
  • Yusuke Shuto - , Sony Group Corporation (Author)
  • Ruben Alcala - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Maximilian Lederer - , Chair of Experimental Physics / Photophysics, Institute of Applied Physics, Fraunhofer Institute for Photonic Microsystems (Author)
  • Konrad Seidel - , Fraunhofer Institute for Photonic Microsystems (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Masanori Tsukamoto - , Sony Group Corporation (Author)
  • Taku Umebayashi - , Sony Group Corporation (Author)


We have previously studied fatigue and its recovery phenomenon on 64 kbits hafnium-based one-transistor and one-capacitor (1T1C) ferroelectric random-access memory (FeRAM) with PVD-TiN (30 nm)/ALD-Hf0.5Zr0.5O2 (8 nm)/CVD-TiN (50 nm) capacitors. In this study, we characterized a single large capacitor fabricated using the same process as the 1T1C FeRAM to clearly understand the recovery mechanism and comprehensively qualify the recovery effect. The results reveal that the recovery effect is caused by domain depinning and new domains switching owing to a redistribution of oxygen vacancy. Furthermore, it is evident from recovery voltage and recovery pulse width dependence of the recovery effect that the recovery voltage can be reduced by applying a longer recovery pulse width. This enables a more flexible circuit design of 1T1C FeRAM when the recovery method is applied to enhance the cycling endurance.


Original languageEnglish
Number of pages4
JournalIEEE journal of the Electron Devices Society
Publication statusAccepted/In press - 2022



  • Capacitor, Capacitors, Fatigue, Ferroelectric films, Ferroelectric random-access memory, hafnium oxide, Nonvolatile memory, Random access memory, recovery, Stress, Voltage, zirconium oxide