Investigating the ESD robustness of RF circuits and elements by transmission line pulsing

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Heinrich Wolf - , Fraunhofer Institute for Reliability and Microintegration (Author)
  • Horst Gieser - , Fraunhofer Institute for Reliability and Microintegration (Author)
  • Karlheinz Bock - , Chair of Electronic Packaging Technology, Fraunhofer Institute for Reliability and Microintegration, Technical University of Berlin (Author)

Abstract

This work describes the application of a combined RF-TLP test set-up. It alternates between pulsed high current characterization and scattering parameter measurements up to 10 GHz in order to investigate the influence of the stress pulses on the RF behavior of the DUT. As an example, the high current behavior of a broad band amplifier circuit is analyzed. Furthermore the breakdown behavior of MIM capacitors fabricated in a GaAs technology is investigated.

Details

Original languageEnglish
Title of host publication2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
PublisherCS MANTECH
ISBN (print)189358013X, 9781893580138
Publication statusPublished - 2009
Peer-reviewedYes

Publication series

Series2009 International Conference on Compound Semiconductor Manufacturing Technology

Conference

Title2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
Duration18 - 21 May 2009
CityTampa, FL
CountryUnited States of America

External IDs

ORCID /0000-0002-0757-3325/work/142252341

Keywords

ASJC Scopus subject areas

Keywords

  • Breakdown, ESD, High current characteristic, Transmission line pulsing

Library keywords