Investigating the ESD robustness of RF circuits and elements by transmission line pulsing

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung

Beitragende

  • Heinrich Wolf - , Fraunhofer Institute for Reliability and Microintegration (Autor:in)
  • Horst Gieser - , Fraunhofer Institute for Reliability and Microintegration (Autor:in)
  • Karlheinz Bock - , Professur für Aufbau- und Verbindungstechnik der Elektronik, Fraunhofer Institute for Reliability and Microintegration, Technische Universität Berlin (Autor:in)

Abstract

This work describes the application of a combined RF-TLP test set-up. It alternates between pulsed high current characterization and scattering parameter measurements up to 10 GHz in order to investigate the influence of the stress pulses on the RF behavior of the DUT. As an example, the high current behavior of a broad band amplifier circuit is analyzed. Furthermore the breakdown behavior of MIM capacitors fabricated in a GaAs technology is investigated.

Details

OriginalspracheEnglisch
Titel2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
Herausgeber (Verlag)CS MANTECH
ISBN (Print)189358013X, 9781893580138
PublikationsstatusVeröffentlicht - 2009
Peer-Review-StatusJa

Publikationsreihe

Reihe2009 International Conference on Compound Semiconductor Manufacturing Technology

Konferenz

Titel2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
Dauer18 - 21 Mai 2009
StadtTampa, FL
LandUSA/Vereinigte Staaten

Externe IDs

ORCID /0000-0002-0757-3325/work/142252341

Schlagworte

ASJC Scopus Sachgebiete

Schlagwörter

  • Breakdown, ESD, High current characteristic, Transmission line pulsing

Bibliotheksschlagworte