INTERFACE PROPERTIES OF STRAINED INGAAS/INP QUANTUM-WELLS GROWN BY LP-MOVPE

Research output: Contribution to journalResearch articleContributed

Contributors

  • R SCHWEDLER - (Author)
  • B GALLMANN - (Author)
  • K WOLTER - (Author)
  • A KOHL - (Author)
  • H Kurz - (Author)
  • S JUILLAGUET - (Author)
  • J CAMASSEL - (Author)
  • JP LAURENTI - (Author)
  • FH BAUMANN - (Author)
  • Karl Leo - , Chair of Opto-Electronics (Author)

Details

Original languageEnglish
Pages (from-to)891-894
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
Publication statusPublished - 1992
Peer-reviewedNo

External IDs

Scopus 0026924280