INTERFACE PROPERTIES OF STRAINED INGAAS/INP QUANTUM-WELLS GROWN BY LP-MOVPE
Research output: Contribution to journal › Research article › Contributed
Contributors
Details
Original language | English |
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Pages (from-to) | 891-894 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Issue number | 1-4 |
Publication status | Published - 1992 |
Peer-reviewed | No |
External IDs
Scopus | 0026924280 |
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