Integration and Reliability Aspects of Low-Temperature and Au-free Ta/Al-based Ohmic Contacts for AlGaN/GaN MIS-HEMTs

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

Details

Original languageEnglish
Pages (from-to)307-310
JournalIEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021)
Volume2021
Publication statusPublished - 2021
Peer-reviewedYes

External IDs

Scopus 85123450634
ORCID /0000-0003-3814-0378/work/142256141

Keywords

Keywords

  • high electron mobility transistors, AIGaN/GaN heterostructures, GaN-on-Si, ohmic contacts, gold-free, low-temperature annealing, tantalum/aluminum/tantalumnitride

Library keywords