Inline-characterization and step coverage optimization of deposited dielectrics in DRAM structures

Research output: Contribution to journalResearch articleContributedpeer-review


  • Martin Krupinski - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Alexander Kasic - , Aleo Solar AG (Author)
  • Thomas Hecht - , Evonik Litarion GmbH (Author)
  • Matthias Klude - , Global Foundries, Inc. (Author)
  • Johannes Heitmann - , NaMLab - Nanoelectronic materials laboratory gGmbH, Freiberg University of Mining and Technology (Author)
  • Elke Erben - , Global Foundries, Inc. (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)


A combination of a common ellipsometric thickness determination from a plane surface and volume-related information gained from a Fourier transform infrared measurement enables monitoring of thin nm-scale layers in 3-D structures. This method was established to characterize dielectric layers deposited by atomic layer deposition within a capacitor structure of a 65-nm DRAM technology. The influence of precursor flow and pulse time on the overall homogeneity and step coverage of zirconium aluminum oxide was investigated. A clear correlation to the precursor amount and the geometry of the deposition tool can be shown.


Original languageEnglish
Pages (from-to)253-259
Number of pages7
JournalIEEE transactions on semiconductor manufacturing
Issue number2
Publication statusPublished - 2013

External IDs

ORCID /0000-0003-3814-0378/work/142256319



  • Dielectrics, DRAM, ellipsometry, FTIR, high-k, optical characterization, step coverage