Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2films

Research output: Contribution to journalResearch articleContributedpeer-review


  • Ruben Alcala - , TUD Dresden University of Technology (Author)
  • Claudia Richter - , TUD Dresden University of Technology (Author)
  • Monica Materano - , Chair of Nanoelectronics, TUD Dresden University of Technology (Author)
  • Patrick D. Lomenzo - , TUD Dresden University of Technology (Author)
  • Chuanzhen Zhou - , North Carolina State University (Author)
  • Jacob L. Jones - , North Carolina State University (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, TUD Dresden University of Technology (Author)
  • Uwe Schroeder - , TUD Dresden University of Technology (Author)


Hafnium oxide (HfO2), zirconium oxide (ZrO2), and the solid-solution (Hf1-xZrxO2) system continue to be some of the most relevant ferroelectric materials, in particular, for their promising application in CMOS integrated ferroelectric memories. Recent understanding of the influence of oxygen supplied during film deposition on the structural phase formation process in Hf1-xZrxO2 films has drawn attention to a commonly overlooked parameter for tuning ferroelectric and electrical properties of these films. In this paper, a comparison of O3 and O2 plasma used as the oxygen source in an atomic layer deposition process for Hf1-xZrxO2 films within the full compositional range is discussed. A combination of structural and electrical characterization methods grant insight on the influence of each of the oxygen sources on the crystalline phase formation during deposition of Hf1-xZrxO2 films. These observations are then correlated to the material's behavior regarding its ferroelectric and electrical properties; mainly, dielectric constant, ferroelectric remanent polarization, and number of electric field cycles to breakdown.


Original languageEnglish
Article number035102
JournalJournal of Physics D: Applied Physics
Issue number3
Publication statusPublished - Jan 2021

External IDs

ORCID /0000-0003-3814-0378/work/142256181



  • ALD, ferroelectric, hafnium oxide, oxygen plasma, ozone, PEALD, zirconium oxide

Library keywords