Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
In this paper, the self.heating effect for multi-finger fully depleted SOI nMOSFETs is investigated. The layout parameters of the transistor are varied, and the conductance-based method is used for the extraction of the thermal resistance. An empirical-based scalable thermal resistance model that accounts for geometrical layout parameters is developed. Further, hot carrier stress degradation is examined, and a correlation between self.heating and hot carrier degradation is established. The associated self.heating with geometrical dimension influences the amount of hot carrier degradation and should be taken into account for accurate degradation modeling. It is found that with the increase of temperature, the contribution of the parasitic bias temperature instability effect increases the drift of the threshold voltage. Improved thermal and reliability performance is achieved for the device structures where a continuous active area is divided into multiple smaller active regions.
Details
Original language | English |
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Pages (from-to) | 387-395 |
Number of pages | 9 |
Journal | IEEE transactions on device and materials reliability |
Volume | 22 |
Issue number | 3 |
Publication status | Published - 16 Jun 2022 |
Peer-reviewed | Yes |
External IDs
Scopus | 85132774980 |
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Mendeley | 38b155bf-9f44-3f04-a316-c8447c1e1d5b |
unpaywall | 10.1109/tdmr.2022.3183630 |
WOS | 000851162500014 |
Keywords
Research priority areas of TU Dresden
DFG Classification of Subject Areas according to Review Boards
ASJC Scopus subject areas
Keywords
- Degradation, FDSOI, Fingers, Frequency measurement, Hot carrier degradation, Layout, Logic gates, Multi-finger RF MOSFETs, RF-Reliability, S-Parameters, Self-heating, Silicon-on-insulator, Temperature measurement, hot carrier degradation, S-parameters, multi-finger RF MOSFETs, RF-reliability