Impact of scaling on the performance of HfO<inf>2</inf>-based ferroelectric field effect transistors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 3699 - 3706 |
| Number of pages | 8 |
| Journal | IEEE transactions on electron devices : ED |
| Volume | 61 |
| Issue number | 11 |
| Publication status | Published - 17 Sept 2014 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84908452164 |
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