HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Article number | 022402 |
Journal | Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films |
Volume | 38 |
Issue number | 2 |
Publication status | Published - Mar 2020 |
Peer-reviewed | Yes |
External IDs
Scopus | 85077965562 |
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