HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison

Research output: Contribution to journalResearch articleContributedpeer-review

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Details

Original languageEnglish
Article number022402
Journal Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films
Volume38
Issue number2
Publication statusPublished - Mar 2020
Peer-reviewedYes

External IDs

Scopus 85077965562