HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Details
Original language | English |
---|---|
Title of host publication | 2012 4th IEEE International Memory Workshop |
Publisher | IEEE |
ISBN (electronic) | 978-1-4673-1081-9 |
ISBN (print) | 978-1-4673-1079-6 |
Publication status | Published - 2012 |
Peer-reviewed | Yes |
Publication series
Series | IEEE International Memory Workshop (IMW) |
---|---|
ISSN | 2330-7978 |
External IDs
Scopus | 84864123275 |
---|