HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

  • Ekaterina Yurchuk - (Author)
  • J. Müller - (Author)
  • R. Hoffmann - (Author)
  • J. Paul - (Author)
  • D. Martin - (Author)
  • R. Boschke - (Author)
  • T. Schlösser - (Author)
  • S. Müller - (Author)
  • S. Slesazeck - (Author)
  • R. Van Bentum - (Author)
  • Martin Trentzsch - (Author)
  • U. Schröder - (Author)
  • T. Mikolajick - , Chair of Nanoelectronics (Author)

Details

Original languageEnglish
Title of host publication2012 4th IEEE International Memory Workshop
PublisherIEEE
ISBN (electronic)978-1-4673-1081-9
ISBN (print)978-1-4673-1079-6
Publication statusPublished - 2012
Peer-reviewedYes

Publication series

SeriesIEEE International Memory Workshop (IMW)
ISSN2330-7978

External IDs

Scopus 84864123275

Keywords