HEMT test structure technology for fast on-wafer characterization of epitaxial GaN-on-Si material

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • M. Schuster - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • A. Wachowiak - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • N. Szabo - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • A. Jahn - , Chair of Semiconductors (Author)
  • U. Merkel - , Chair of Semiconductors (Author)
  • A. Ruf - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH, Azzurro Semiconductors AG (Author)
  • S. Murad - , TUD Dresden University of Technology (Author)
  • C. Hu - , TUD Dresden University of Technology (Author)
  • L. Groh - , TUD Dresden University of Technology (Author)
  • S. Lutgen - , TUD Dresden University of Technology (Author)

Abstract

This work presents a HEMT test structure technology which is developed for fast on-wafer characterization of 150mm epitaxial GaN-on-Si material. The test structures allow for extraction of key device and GaN-based material parameter. Information on wafer homogeneity can be obtained via wafer maps. This technology is suitable and essential to evaluate different MOCVD growth conditions on device properties in short time and, hence, significantly accelerates the growth development towards the desired material quality for GaN-based high power electronic products.

Details

Original languageEnglish
Title of host publication2013 IEEE International Semiconductor Conference Dresden - Grenoble
ISBN (electronic)978-1-4799-1251-3, 978-1-4799-1250-6 (CD)
Publication statusPublished - 2013
Peer-reviewedYes

Publication series

SeriesInternational Semiconductor Conference Dresden (ISCDG)

Conference

Title2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013
Duration26 - 27 September 2013
CityDresden
CountryGermany

External IDs

ORCID /0000-0003-3814-0378/work/142256307

Keywords

ASJC Scopus subject areas

Keywords

  • AlGaN/GaN, buffer breakdown, epitaxial GaN, GaN growth, GaN on Si, HEMT, high power, MOCVD, wafer map