From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Stefan Mueller - (Author)
  • Johannes Mueller - (Author)
  • Raik Hoffmann - (Author)
  • Ekaterina Yurchuk - (Author)
  • Till Schloesser - (Author)
  • Roman Boschke - (Author)
  • Jan Paul - (Author)
  • Matthias Goldbach - (Author)
  • Tom Herrmann - (Author)
  • Alban Zaka - (Author)
  • Uwe Schroeder - (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics (Author)

Details

Original languageEnglish
Pages (from-to)4199-4205
Number of pages7
JournalIEEE transactions on electron devices : ED
Volume60
Issue number12
Publication statusPublished - 2013
Peer-reviewedYes

External IDs

WOS 000327584400034
ORCID /0000-0003-3814-0378/work/12321490
Scopus 84889594858

Keywords

Library keywords