Field emitter-based ESD-protection circuits for high-frequency devices and IC's
Research output: Contribution to journal › Conference article › Contributed › peer-review
Contributors
Abstract
Based on investigations to find the thresholds of the ESD voltage inducing degradations to GaAs Schottky diodes and MESFETS, we have developed and fabricated new ESD protection structures based on electron field emission. Using these GaAs electron field-emitter wedges we have designed and fabricated protection circuits integrated in GaAs microwave devices to prevent the devices from degradation caused by ESD.
Details
| Original language | English |
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| Pages (from-to) | 4.7.1-4.7.7 |
| Journal | Electrical Overstress Electrostatic Discharge Symposium proceedings |
| Publication status | Published - 1992 |
| Peer-reviewed | Yes |
Conference
| Title | Electrical Overstress/Electrostatic Discharge Symposium 1992 |
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| Abbreviated title | EOS/ESD 1992 |
| Duration | 16 - 18 September 1992 |
| City | Dallas |
| Country | United States of America |
External IDs
| ORCID | /0000-0002-0757-3325/work/139064996 |
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